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The application of frequency selection surfaces (FSSs) is limited by large area, narrow bandwidth, low stopband inhibition and large ripple in the passband. A method for designing high-order wide band miniaturized-element frequency selective surface (MEFSS) with capacitance loading is introduced. The proposed structure is composed of multiply sub-wavelength interdigital capacitance layer, sub-wavelength inductive wire grids separated by dielectric substrates. A simple equivalent circuit model, composed of short transmission lines coupled together with shunt inductors and capacitors, is presented for this structure. Using the equivalent circuit model and electromagnetic (EM) model, an analytical synthesis procedure is developed that can be used to synthesize the MEFSS from its desired system-level performance indicators such as the center frequency of operation, bandwidth and stopband inhibition. Using this synthesis procedure, a prototype of the proposed MEFSS with a third-order bandpass response, center frequency of 2.75 GHz, fractional bandwidth of 8% is designed, fabricated, and measured. The measurement results confirm the theoretical predictions and the design procedure of the structure and demonstrate that the proposed MEFSS has a stable frequency response with respect to the angle of incidence of the EM wave in the ±30° range incidence, and the in-band return loss is greater than 18 dB, and the rejection in the stopband is greater than 25 dB at the frequency of 3.2 GHz.
Performance study of vertical MSM solar-blind photodetectors based on β-Ga2O3 thin film
In this work, β-Ga2O3 thin films were grown on SiO2 substrate by atomic layer deposition (ALD) and annealed in N2 atmosphere to enhance the crystallization quality of the thin films, which were verified from X-rays diffraction (XRD). Based on the grown β-Ga2O3 thin films, vertical metal-semiconductor-metal (MSM) interdigital photodetectors (PDs) were fabricated and investigated. The PDs have an ultralow dark current of 1.92 pA, ultra-high photo-to-dark current ratio (PDCR) of 1.7×106, and ultra-high detectivity of 4.25×1014 Jones at a bias voltage of 10 V under 254 nm deep ultraviolet (DUV). Compared with the horizontal MSM PDs under the same process, the PDCR and detectivity of the fabricated vertical PDs are increased by 1 000 times and 100 times, respectively. In addition, the vertical PDs possess a high responsivity of 34.24 A/W and an external quantμm efficiency of 1.67×104%, and also exhibit robustness and repeatability, which indicate excellent performance. Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.