Preparation of a new gate dielectric material HfTiON film

doi:1005-8885 (2007) 01-0077-03

中国邮电高校学报(英文) ›› 2007, Vol. 14 ›› Issue (1): 77-79.doi: 1005-8885 (2007) 01-0077-03

Preparation of a new gate dielectric material HfTiON film

YU Guo-yi, ZOU Xue-cheng, CHEN Wei-bing

Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2006-10-12 修回日期:1900-01-01 出版日期:2007-03-30
通讯作者: YU Guo-yi

Preparation of a new gate dielectric material HfTiON film

YU Guo-yi, ZOU Xue-cheng, CHEN Wei-bing

Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2006-10-12 Revised:1900-01-01 Online:2007-03-30
Contact: YU Guo-yi

摘要/Abstract

摘要：

A new gate dielectric material HfTiON is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient, followed by annealing in N2 at 600 ℃ and 800 ℃ respectively for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared for different anneal conditions. The results indicate that the sample annealed at 800 ℃ exhibits lower interface-state and oxide-charge densities, and better device reliability. This is attributed to the fact that the rapid thermal annealing at the higher temperature of 800 ℃ can effectively remove the damage-induced precipitation, forming a hardened dielectric/Si interface with high reliability.

关键词:

HfTiON,;high-k;gate;dielectric,;interface,;reactive;co-sputtering,;gate;leakage;current

Abstract:

Key words:

HfTiON;high-k gate dielectric;interface;reactive co-sputtering;gate leakage current

中图分类号:

YU Guo-yi, ZOU Xue-cheng, CHEN Wei-bing. Preparation of a new gate dielectric material HfTiON film[J]. Acta Metallurgica Sinica(English letters), 2007, 14(1): 77-79.

参考文献

1. Gusev E P, Carier E, Buchanan D A, et al. Ultrathin high-k metal oxides on silicon: processing, characterization and integration issues. Microelectronic Engineering, 2001, 59(1-4): 341-349

2. Wilk G D, Wallace R M. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon. Applied Physics Letters, 1999, 74(19): 2854-2856

3. Wilk G D, Wallace R M, Anthony J M. High-kgate dielectrics: current status and materials properties considerations.Journal of Applied Physics, 2001,89(10): 5243-5275

4. Lee B H, Kang L, Nieh R, et al.Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing. Applied Physics Letters, 2000, 76(14): 1926-1928

5. Yamamoto K, Hayashi S, Niwa M, et al.Electrical and physical properties of HfO₂ films prepared by remote plasma oxidation of Hf metal. Applied Physics Letters, 2003, 83(11): 2229-2231

6. Sayan S, Aravamudhan S, Busch B W. Chemical vapor deposition of HfO₂ film on Si (100). Journal of Vacuum Science and Technology: A, 2002, 20(2): 507-512

7. Campbell S A, Ma T Z, Smith R. High mobility HfO₂ N- and P-channel transistors. Microelectronic Engineering, 2001, 59(1-4): 361-365

8. Zhu W, Ma T P, Tamagawa T. HfO₂ and HfAlO for CMOS: thermal stability and current transport. Proceedings of IEEE International Electron Devices Meeting, Dec 2-5, 2001, Washington, DC, USA. Piscataway, NJ, USA: IEEE, 2001: 463-466

9. Qi W J, Nieh R, Lee B H, et al. Electrical and reliability characteristics of ZrO₂ deposited directly on Si for gate dielectric application.Applied Physics Letters, 2000, 77(20): 3269-3271

10. Akbar M S, Gopalan S, Cho H J, et al. High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH₃ post-deposition anneal. Applied Physics Letters, 2003, 82(11): 1757-1759

11. Visokay M R, Chambers J J, Rotondaro A L P, et al. Application of HfSiON as a gate dielectric material. Applied Physics Letters, 2002, 80(17): 3183-3185

12. Quevedo-Lopez M A, El-Bouanani M, Gnade B E, et al. Interdiffusion studies for HfSi_xO_y and ZrSi_xO_y on Si. Journal of Applied Physics 2002, 97(7): 3540-3550

13. Puthenkovilakam R, Carter E A, Chang J P. First-principles exploration of alternative gate dielectrics: electronic structure of ZrO₂/Si and ZrSiO₄/Si interfaces. Physical Review B. 2004, 69: 155-329

14. Rhee S J, Kang C S, Choi C H, et al. Improved electrical and material characteristics of hafnium titanate multi-metal oxide N-MOSFETs with ultra-thin EOT(~8 Å) gate dielectric application. Proceedings of IEEE International Electron Devices Meeting, Dec 13-15, 2004, San Francisco, CA, USA. Piscataway, NJ, USA: IEEE, 2004: 837-840

15. Fang Q, Zhang J Y, Wang Z M, et al. Investigation of TiO₂-doped HfO₂ thin films deposited by photo-CVD. Thin Solid Films, 2003, 428(1-2): 263-268

16. Honda K, Skaki A, Sakashita M, et al. Pulsed laser deposition and analysis for structural and electrical properties of HfO₂-TiO₂ composite films. Japanese Journal of Applied Physics. 2004, 43(4A): 1571-1576

17. Terman L M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid-State Electron, 1962,5(5): 285-299

18. Singh R. Rapid isothermal processing.Journal of Applied Physics, 1988, 63(8): 59-114

19. Fleetwood D M, Shaneyfelt M R, Warren W L, et al. Border traps: issues for MOS irradation response and long-term reliability.Microelectron Reliability, 1995,35(3):403-428

20. Duenas T, Garcia H, Barbolla J, et al.Electrical chearacterization of atomic-Layer-deposited hafnium silicate for alternative gate dielectric application.Proceedings of Spanish Conference on Electron Devices Feb 2-4, 2005, Tarragona, Spain. Piscataway, NJ, USA: IEEE Computer Society, 2005: 45-48

21. Tokuda Y, Kobayashi N, Usami A, et al. Thermal donor annihilation and defect production in N-type silicon by rapid thermal annealing.Journal of Applied Physics, 1989, 66(8):3651-3655

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Preparation of a new gate dielectric material HfTiON film

Preparation of a new gate dielectric material HfTiON film

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