Preparation of a new gate dielectric material HfTiON film

doi:1005-8885 (2007) 01-0077-03

Acta Metallurgica Sinica(English letters) ›› 2007, Vol. 14 ›› Issue (1): 77-79.doi: 1005-8885 (2007) 01-0077-03

Preparation of a new gate dielectric material HfTiON film

YU Guo-yi, ZOU Xue-cheng, CHEN Wei-bing

Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2006-10-12 修回日期:1900-01-01 出版日期:2007-03-30
通讯作者: YU Guo-yi

Preparation of a new gate dielectric material HfTiON film

YU Guo-yi, ZOU Xue-cheng, CHEN Wei-bing

Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2006-10-12 Revised:1900-01-01 Online:2007-03-30
Contact: YU Guo-yi

摘要/Abstract

摘要：

A new gate dielectric material HfTiON is deposited by reactive co-sputtering of Hf and Ti targets in N2/O2 ambient, followed by annealing in N2 at 600 ℃ and 800 ℃ respectively for 2 min. Capacitance-voltage and gate-leakage properties are characterized and compared for different anneal conditions. The results indicate that the sample annealed at 800 ℃ exhibits lower interface-state and oxide-charge densities, and better device reliability. This is attributed to the fact that the rapid thermal annealing at the higher temperature of 800 ℃ can effectively remove the damage-induced precipitation, forming a hardened dielectric/Si interface with high reliability.

关键词:

HfTiON,;high-k;gate;dielectric,;interface,;reactive;co-sputtering,;gate;leakage;current

Abstract:

Key words:

HfTiON;high-k gate dielectric;interface;reactive co-sputtering;gate leakage current

中图分类号:

YU Guo-yi, ZOU Xue-cheng, CHEN Wei-bing. Preparation of a new gate dielectric material HfTiON film[J]. Acta Metallurgica Sinica(English letters), 2007, 14(1): 77-79.

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Preparation of a new gate dielectric material HfTiON film

Preparation of a new gate dielectric material HfTiON film

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