Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

doi:10.1016/S1005-8885(17)60244-9

中国邮电高校学报(英文) ›› 2017, Vol. 24 ›› Issue (6): 74-82.doi: 10.1016/S1005-8885(17)60244-9

• Others • 上一篇

Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

Zhou Qianneng, Zhu Ling, Li Hongjuan, Lin Jinzhao, Wang Liangcai, Luo W

1. 重庆邮电大学
2. 四川理工学院

收稿日期:2017-02-13 修回日期:2017-06-12 出版日期:2017-12-30 发布日期:2017-12-01
通讯作者: 周前能 E-mail:zhouqn@cqupt.edu.cn
基金资助:
the Natural Science Foundation Project of CQ CSTC (cstc2016jcyjA0347), the Science and Technology on Analog Integrated Circuit Laboratory (6142802011503), the Key Technology Innovation Project of Key Industries in Chongqing (cstc2016zdcy- ztzx0038, cstc2017zdcy-zdyf0166)

Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

Zhou Qianneng, Zhu Ling, Li Hongjuan, Lin Jinzhao, Wang Liangcai, Luo W

1. 重庆邮电大学 2. 四川理工学院

Received:2017-02-13 Revised:2017-06-12 Online:2017-12-30 Published:2017-12-01
Contact: Qian-Neng ZHOU E-mail:zhouqn@cqupt.edu.cn
Supported by:
the Natural Science Foundation Project of CQ CSTC (cstc2016jcyjA0347), the Science and Technology on Analog Integrated Circuit Laboratory (6142802011503), the Key Technology Innovation Project of Key Industries in Chongqing (cstc2016zdcy- ztzx0038, cstc2017zdcy-zdyf0166)

摘要/Abstract

摘要： Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxide- semiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage’s temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38× /°C when temperature is changed from 40 °C to 125 °C with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of 104.54 dB, 104.54 dB, 104.5 dB, 101.82 dB and 79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.

关键词: subthreshold MOS bandgap reference, pre-regulator, temperature coefficient, power supply rejection ratio

Abstract: Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxide- semiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage’s temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38× /°C when temperature is changed from 40 °C to 125 °C with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of 104.54 dB, 104.54 dB, 104.5 dB, 101.82 dB and 79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.

Key words: subthreshold MOS bandgap reference, pre-regulator, temperature coefficient, power supply rejection ratio

中图分类号:

TN432

Zhou Qianneng, Zhu Ling, Li Hongjuan, Lin Jinzhao, Wang Liangcai, Luo W. Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference[J]. JOURNAL OF CHINA UNIVERSITIES OF POSTS AND TELECOM, 2017, 24(6): 74-82.

参考文献

1. Yu H, Zou X C, Chen C Y. A super performance bandgap voltage reference with adjustable output for DC-DC converter. The Journal of China Universities of Posts and Telecommunications, 2006, 13 (1): 75-78

2. Magod R, Suda N, Ivanov V, et al. A low-noise output capacitorless low-dropout regulator with a switched-RC bandgap reference. IEEE Transactions on Power Electronics, 2017, 32(4): 2856-2864

3. Shih Y C, Otis B P. An inductorless DC-DC converter for energy harvesting with a 1.2 μW bandgap-referenced output controller. IEEE Transactions on Circuits and Systems II: Express Briefs, 2011, 58 (12): 832-836

4. Zhang H L, Xiao Z B, Tan X, et al. Low-power sub-1-V compact bandgap reference for passive RFID tags. Electronics Letters, 2015, 51 (11): 815-816

5. Widlar R J. New developments in IC voltage regulators. IEEE Journal of Solid-State Circuits, 1971, 6 (1): 2-7

6. Lam Y H, Ki W H. CMOS bandgap references with self-biased symmetrically matched current-voltage mirror and extension of sub-1-V design. IEEE Transactions on Very Large Scale Integration Systems, 2010, 18(6): 857-865

7. Perry R T, Lewis S H, Paul Brokaw A, et al. Viswanathan T R. A 1.4 V supply CMOS fractional bandgap reference. IEEE Journal of Solid-State Circuits, 2007, 42(10): 2180-2186

8. Chen J H, Ni X W, Mo B X. A curvature compensated CMOS bandgap voltage reference for high precision applications. Proceeding of the 7th International Conference on ASIC, Oct 26-29, 2007, Guilin, China. Piscataway, NJ, USA: IEEE, 2007: 510-513

9. Rincon-Mora G, Allen P E. A 1.1-V current mode and piecewise-linear curvature-corrected bandgap reference. IEEE Journal of Solid-State Circuits, 1998, 33(10): 1551-1554

10. Leung K N, Mok P K T, Leung C Y. A 2-V 23-μA 5.3-ppm/?C curvature-compensated CMOS bandgap voltage reference. IEEE Journal of Solid-State Circuits, 2003, 38(3): 561-564

11. Andreou C M, Koudounas S, Georgiou J. A novel wide-temperature-range, 3.9 ppm/?C CMOS bandgap reference circuit. IEEE Journal of Solid-Sate Circuits, 2012, 47(2): 574-581

12. Zhou Z K, Shi Y, Huang Z, et al. A 1.6-V 25-μA 5-ppm/°C curvature-compensated bandgap reference. IEEE Transactions on Circuits and Systems I: Regular Papers, 2012, 59 (4): 677-684

13. Duan Q Z, Roh J J. A 1.2-V 4.2-ppm/?C high-order curvature-compensated CMOS bandgap reference. IEEE Transactions on Circuits and Systems I: Regular Papers, 2015, 62 (3): 662-670

14. Lee K K, Lande T S, Häfliger P D. A sub-µW bandgap reference circuit with an inherent curvature-compensation property. IEEE Transactions on Circuits and Systems I: Regular Papers, 2015, 62 (1): 1-9

15. Ma B, Yu F Q. A novel 1.2-V 4.5-ppm/ºC curvature-compensated CMOS bandgap reference. IEEE Transactions on circuits and systems I: Regular Papers, 2014, 61 (4): 1026-1035

16. Adl A H, El-Sankary K, El-Masry E. Bandgap reference with curvature corrected compensation using subthreshold MOSFETs. Proceeding of the 2009 IEEE International Symposium on Circuits and Systems, May 24-27, 2009, Taipei, China. Piscataway, NJ, USA: IEEE, 2009: 812-815

17. Sangolli S S, Rohini S H. Design of low voltage bandgap reference circuit using subthreshold MOSFET. Proceeding of the 5th Nirma University International Conference on Engineering (NUiCONE’15), Nov 26-28, 2015, Ahmedabad, India. Piscataway, NJ, USA: IEEE, 2015: 6p

18. Li Y L, Wang Y, Yan N, et al. A subthreshold MOSFET bandgap reference with ultra-low power supply voltage. Proceeding of the 9th IEEE International Conference on ASIC, Oct 25-28, 2011, Xiamen, China. Piscataway, NJ, USA: IEEE, 2011: 862-865

19. Giustolisi G, Palumbo G, Criscione M, et al. A low-voltage low-power voltage reference based on subthreshold MOSFETs. IEEE Journal of Solid-State Circuits, 2003, 38(1): 151-154

20. Huang P H, Lin H C, Lin Y T. A simple subthreshold CMOS voltage reference circuit with channel-length modulation compensation. IEEE Transactions on Circuits and Systems II: Express Briefs, 2006, 53(9): 882-885

21. Tsividis Y P, Ulmer R W. A CMOS voltage reference. IEEE Journal of Solid-State Circuits, 1978, 13(6): 774-778

22. Vittoz E, Fellrath J. CMOS analog integrated circuits based on weak inversion operation. IEEE Journal of Solid-State Circuits, 1977, 12(3): 224-231

[1]	周前能闫凯林金朝庞宇李国权罗伟. Novel high-PSRR high-order curvature-compensated bandgap voltage reference[J]. 中国邮电高校学报(英文版), 2016, 23(2): 66-72.
[2]	李斌樊祥宁王志功. Fully integrated low phase noise multi-band LC-tank voltage controlled oscillator with switched-capacitor resonator[J]. Acta Metallurgica Sinica(English letters), 2012, 19(6): 118-122.
[3]	余华; 邹雪城; 陈朝阳. A Super Performance Bandgap Voltage Reference with Adjustable Output for DC-DC Converter.[J]. Acta Metallurgica Sinica(English letters), 2006, 13(1): 75-78.

Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

编辑推荐

Metrics

本文评价