中国邮电高校学报(英文) ›› 2017, Vol. 24 ›› Issue (6): 74-82.doi: 10.1016/S1005-8885(17)60244-9

• Others • 上一篇    

Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

Zhou Qianneng, Zhu Ling, Li Hongjuan, Lin Jinzhao, Wang Liangcai, Luo W   

  1. 1. 重庆邮电大学
    2. 四川理工学院
  • 收稿日期:2017-02-13 修回日期:2017-06-12 出版日期:2017-12-30 发布日期:2017-12-01
  • 通讯作者: 周前能 E-mail:zhouqn@cqupt.edu.cn
  • 基金资助:
    the Natural Science Foundation Project of CQ CSTC (cstc2016jcyjA0347), the Science and Technology on Analog Integrated Circuit Laboratory (6142802011503), the Key Technology Innovation Project of Key Industries in Chongqing (cstc2016zdcy- ztzx0038, cstc2017zdcy-zdyf0166)

Novel high PSRR high-order temperature-compensated subthreshold MOS bandgap reference

Zhou Qianneng, Zhu Ling, Li Hongjuan, Lin Jinzhao, Wang Liangcai, Luo W   

  1. 1. 重庆邮电大学 2. 四川理工学院
  • Received:2017-02-13 Revised:2017-06-12 Online:2017-12-30 Published:2017-12-01
  • Contact: Qian-Neng ZHOU E-mail:zhouqn@cqupt.edu.cn
  • Supported by:
    the Natural Science Foundation Project of CQ CSTC (cstc2016jcyjA0347), the Science and Technology on Analog Integrated Circuit Laboratory (6142802011503), the Key Technology Innovation Project of Key Industries in Chongqing (cstc2016zdcy- ztzx0038, cstc2017zdcy-zdyf0166)

摘要: Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxide- semiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage’s temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38× /°C when temperature is changed from 40 °C to 125 °C with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of 104.54 dB, 104.54 dB, 104.5 dB, 101.82 dB and 79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.

关键词: subthreshold MOS bandgap reference, pre-regulator, temperature coefficient, power supply rejection ratio

Abstract: Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxide- semiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CMOS) process. By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique, the output reference voltage’s temperature performance of the subthreshold MOS BGR is effectively improved. The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator. Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38× /°C when temperature is changed from 40 °C to 125 °C with a power supply voltage of 1.2 V. The subthreshold MOS BGR achieves the PSRR of 104.54 dB, 104.54 dB, 104.5 dB, 101.82 dB and 79.92 dB at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz respectively.

Key words: subthreshold MOS bandgap reference, pre-regulator, temperature coefficient, power supply rejection ratio

中图分类号: