|
1. ARORA K, GOEL N, KUMAR M, et al. Ultrahigh
performance of self-powered β-Ga2O3 thin film solar-blind
photodetector grown on cost-effective Si substrate using high-temperature seed
layer. ACS Photonics, 2018, 5(6): 2391-2401.
2. KAUR D, KUMAR M. A
strategic review on gallium oxide based deep-ultraviolet photodetectors: recent
progress and future prospects. Advanced Optical Materials, 2021, 9(9): Article
2002160/1-34.
3. LIANG H L, HAN Z Y, MEI Z
X. Recent progress of deep ultraviolet photodetectors using amorphous gallium
oxide thin films. Physica Status Solidi (a): Applications and Materials
Science, 2021, 218(1): Article 2000339/1-51.
4. XU J J, ZHENG W, HUANG F.
Gallium oxide solar-blind ultraviolet photodetectors: a review. Journal of
Materials Chemistry C. 2019, 7(29): 8753-8770.
5. TSAO J Y, CHOWDHURY S,
HOLLIS M A, et al. Ultrawide-bandgap semiconductors: research opportunities and
challenges. Advanced Electronic Materials, 2018, 4(1): Article 1600501/1-49.
6. ZHANG T, LI Y F, CHENG Q,
et al. Research on the crystal phase and orientation of Ga2O3 hetero-epitaxial film. Superlattices and Microstructures, 2021, 159: Article
107053/1-8.
7. ALEMA F, SERYOGIN G,
OSINSKY A, et al. Ge doping of β-Ga2O3 by MOCVD. APL
Materials, 2021, 9(9): Article 091102/1-11.
8. SHEN H, BASKARAN K, YIN Y
N, et al. Effect of thickness on the performance of solar blind photodetectors
fabricated using PLD grown β-Ga2O3 thin films. Journal of
Alloys and Complounds, 2020, 822: Article 153419.
9. KALARICKAL N K, XIA Z B,
MCGLONE J, et al. Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3.
Applied Physics Letters, 2019, 115(15): Article 152106/1-4.
10.SHENG T, LIU X Z, QIAN L X,
et al. Photoelectric properties of β-Ga2O3 thin films
annealed at different conditions. Rare Metals, 2015, 41: 1375-1379.
11.HASSANIEN, A M, ATTA A A,
EL-NAHASS M M, et al. Effect of annealing temperature on structural and optical
properties of gallium oxide thin films deposited by RF-sputtering. Optical and
Quantum Electronics. 2020, 52(4): Article 194/1-16
12.GU K Y, ZHANG Z L, TANG K,
et al. Effects of sputtering pressure and oxygen partial pressure on amorphous
Ga2O3 film-based solar-blind ultraviolet photodetectors.
Applied Surface Science, 2022, 605(2): Article 154606/1-8.
13.ILHOM S, MOHAMMAD A, SHUKLA
D, et al. Low-temperature as-grown crystalline β-Ga2O3 films via plasma-enhanced atomic layer deposition. ACS Applied Materials &
Interfaces, 2021, 13(7): 8538-8551.
14.COMSTOCK D J, ELAM J W.
Atomic layer deposition of Ga2O3 films using
trimethylgallium and ozone. Chemistry of Materials, 2012, 24(21): 4011-4018.
15.HU G C, SHAN C X, ZHANG N,
et al. High gain Ga2O3 solar-blind photodetectors
realized via a carrier multiplication process. Optics Express, 2015, 23(10):
13554-13561.
16.LEE S H, LEE K M, KIM Y B,
et al. Sub-microsecond response time deep-ultraviolet photodetectors using α-Ga2O3 thin films grown via low-temperature atomic layer deposition. Journal of Alloys
and Compounds, 2019, 780: 400-407.
17.XU Y, CHENG Y L, LI Z, et
al. Ultrahigh-performance solar-blind photodetectors based on high quality
heteroepitaxial single crystalline β-Ga2O3 film grown by
vacuumfree, low-cost mist chemical vapor deposition. Advanced Materials
Technologies, 2021, 6(6): Article 2001296/1-11.
18.CHEN M N, ZHANG Z P, LÜ Z
S, et al. Polycrystalline Ga2O3 nanostructure-based thin
films for fast-response solar-blind photodetectors. ACS Applied Nano Materials,
2022, 5(1): 351-360.
19.SUN R, ZHANG H Y, WANG G G,
et al. Effect of thickness on the microstructure, surface morphology and
optical properties of N-incorporated beta-Ga2O3 films.
Superlattices and Microstructures, 2014, 65: 146-151.
20.LI L, AUER E, LIAO M Y, et
al. Deep-ultraviolet solar-blind photoconductivity of individual gallium oxide
nanobelts. Nanoscale, 2011, 3(3): 1120-1126.
21.GUO D Y, WU Z P, AN Y H, et
al. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors. Applied Physics Letters, 2014, 105:
Article 023507/1-5
22.LI M Q, YANG N, WANG G G,
et al. Highly preferred orientation of Ga2O3 films
sputtered on SiC substrates for deep UV photodetector application. Applied
Surface Science, 2019, 471: 694-702.
23.GUO D Y, LIU H, LI P G, et
al. Zero-power-consumption solar-blind photodetector based on β-Ga2O3/NSTO
heterojunction. ACS Applied Materials & Interfaces, 2017, 9(2): 1619-1628.
24.HUANG L, FENG Q, HAN G Q,
et al. Comparison study of β-Ga2O3 photodetectors grown
on sapphire at different oxygen pressures. IEEE Photonics Journal, 2017, 9(4):
Article 26803708/1-8.
25.XU Y, AN Z Y, ZHANG L, et
al. Solar blind deep ultraviolet β-Ga2O3 photodetectors
grown on sapphire by the mist-CVD method. Optical Materials Express,
2018, 8(9): 2941-2947.
26.QIN Y, SUN H D, LONG S B, et
al. High-performance metal-organic chemical vapor deposition grown ε-Ga2O3 solar-blind photodetector with asymmetric Schottky electrodes. IEEE Electron
Device Letters, 2019, 40(9): 1475-1478.
27.GUO D Y, SHI H Z, QIAN Y P, et al. Fabrication of β-Ga2O3/ZnO
heterojunction for solar-blind deep ultraviolet photodetection. Semiconductor
Science and Technology, 2017, 32(3): Article 03LT01/1-10.
|
