JOURNAL OF CHINA UNIVERSITIES OF POSTS AND TELECOM ›› 2017, Vol. 24 ›› Issue (3): 75-82.doi: 10.1016/S1005-8885(17)60214-0

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Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices


  • Received:2017-03-03 Revised:2017-03-31 Online:2017-06-30 Published:2017-06-30
  • Contact: Shi-Jun LIU

Abstract: NAND flash chips have been innovated from two-dimension (2D) design which is based on planar NAND cells to three-dimension (3D) design which is based on vertical NAND cells. Two types of NAND flash technologies–charge-trap (CT) and floating-gate (FG) are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared.

Key words: 3D NAND flash, charge trap, floating gate