The Journal of China Universities of Posts and Telecommunications ›› 2024, Vol. 31 ›› Issue (2): 3-9.doi: 10.19682/j.cnki.1005-8885.2024.0001

Special Issue: 集成电路

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Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode


  • Received:2023-10-19 Revised:2024-02-25 Online:2024-04-30 Published:2024-04-30
  • Contact: Sheng Gao
  • Supported by:

    This work was supported by the General Program of National Natural Science Foundation of Chongqing (CSTB2023NSCQ-MSX0475), the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications (A2023-7), and the Technology Innovation and Application Demonstration key Project of Chongqing Municipality (cstc2019jszx-zdztzxX0005, cstc2020jscx-gksbX0011).


In this paper, a novel superjunction 4H-silicon carbide (4H-SiC) trench-gate insulated-gate bipolar transistor (IGBT) featuring an integrated clamping PN diode between the P-shield and emitter (TSD-IGBT) is designed and theoretically studied. The heavily doping superjunction layer contributes to a low specific on-resistance, excellent electric field distribution, and quasi-unipolar drift current. The anode of the clamping diode is in floating contact with the P-shield. In the on-state, the potential of the P-shield is raised to the turn-on voltage of the clamping diode, which prevents the hole extraction below the N-type carrier storage layer (NCSL). Additionally, during the turn-off transient, once the clamping diode is turned on, it also promotes an additional hole extraction path. Furthermore, the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.

Key words:

4H-silicon carbide(4H-SiC), trench-gate, superjunction, clamping diode