中国邮电高校学报(英文)

中国邮电高校学报(英文) ›› 2019, Vol. 26 ›› Issue (4): 36-42.doi: DOI: 10.19682/j.cnki.1005-8885.2019.1015

• Wireless • 上一篇    下一篇

12-bit 2.6 GS/ s RF DAC based on return-to-zero technology

Li Xiaopeng, Wang Zhigong, Zhang Yi, Zhang Youtao, Zhang Mi   

  1. 1. Institute of RF and OE ICs, Southeast University, Nanjing 210096, China
    2. Nanjing Guobo Electronics Company Limited, Nanjing 210016, China
    3. Nanjing Electronic Devices Institute, Nanjing 210016, China
    4. National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing 210046, China
    5. College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
    6. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
    7. Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory, Nanjing 210016, China
  • 收稿日期:2018-06-05 修回日期:2019-07-28 出版日期:2019-08-31 发布日期:2019-10-29
  • 通讯作者: Corresponding author: Wang Zhigong, E-mail: zgwang@seu.edu.cn E-mail:zgwang@seu.edu.cn
  • 作者简介:Corresponding author: Wang Zhigong, E-mail: zgwang@seu.edu.cn
  • 基金资助:
    This work was supported by Open Project of State Key
    Laboratory of Millimeter Waves (K201727), Open Project of
    National and Local Joint Engineering Laboratory of RF
    Integration and Micro-Assembly Technology (KFJJ20170203),
    National Science Foundation ( 61571235, 61504065 ) and
    Scientific Research Foundation of Nanjing University of Posts
    and Telecommunications (NUPTSF NY215138).

12-bit 2.6 GS/ s RF DAC based on return-to-zero technology

Li Xiaopeng, Wang Zhigong, Zhang Yi, Zhang Youtao, Zhang Mi   

  1. 1. Institute of RF and OE ICs, Southeast University, Nanjing 210096, China
    2. Nanjing Guobo Electronics Company Limited, Nanjing 210016, China
    3. Nanjing Electronic Devices Institute, Nanjing 210016, China
    4. National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing 210046, China
    5. College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
    6. State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
    7. Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory, Nanjing 210016, China
  • Received:2018-06-05 Revised:2019-07-28 Online:2019-08-31 Published:2019-10-29
  • Contact: Corresponding author: Wang Zhigong, E-mail: zgwang@seu.edu.cn E-mail:zgwang@seu.edu.cn
  • About author:Corresponding author: Wang Zhigong, E-mail: zgwang@seu.edu.cn
  • Supported by:
    This work was supported by Open Project of State Key
    Laboratory of Millimeter Waves (K201727), Open Project of
    National and Local Joint Engineering Laboratory of RF
    Integration and Micro-Assembly Technology (KFJJ20170203),
    National Science Foundation ( 61571235, 61504065 ) and
    Scientific Research Foundation of Nanjing University of Posts
    and Telecommunications (NUPTSF NY215138).

PDF

214

摘要：

A 12-bit 2.6 GS/ s radio frequency digital to analog converter (RF DAC) based on 1 um GaAs heterojunction
bipolar transistor (HBT) process is presented. The DAC integrates a 4:1 multiplexer to reduce the data rate of
input ports, which greatly facilitates the application. DAC core adopts 4 +8 segmented current steering structure. R-2R ladder network is used for 8 least significant bit (LSB) to realize binary current weighting and thermometer
coding is used for 4 most significant bit (MSB). Return-to-zero (RZ) technology is used to expand the effective
bandwidth of DAC output to the third Nyquist band. The proposed DAC has a better output power flatness and
spurious-free dynamic range (SFDR). Compared to traditional DAC, measured results demonstrate that the output
power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词: DAC, RZ, Nyquist band

Abstract:

A 12-bit 2.6 GS/ s radio frequency digital to analog converter (RF DAC) based on 1 um GaAs heterojunction
bipolar transistor (HBT) process is presented. The DAC integrates a 4:1 multiplexer to reduce the data rate of
input ports, which greatly facilitates the application. DAC core adopts 4 +8 segmented current steering structure. R-2R ladder network is used for 8 least significant bit (LSB) to realize binary current weighting and thermometer
coding is used for 4 most significant bit (MSB). Return-to-zero (RZ) technology is used to expand the effective
bandwidth of DAC output to the third Nyquist band. The proposed DAC has a better output power flatness and
spurious-free dynamic range (SFDR). Compared to traditional DAC, measured results demonstrate that the output
power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

Key words: DAC, RZ, Nyquist band

中图分类号: 

版权所有 © 2020 中国邮电高校学报(英文)编辑部　
　 地址：北京邮电大学图书馆1层119 室　邮政编码：100081
Tel：86-010-62282493　Fax： 86-010-62283461　E-mail: jchupt@bupt.edu.cn
本系统由北京玛格泰克科技发展有限公司设计开发 技术支持：support@magtech.com.cn