Preparation
and characteristic study of Schottky diodes based on Ga2O3 thin films

doi:10.19682/j.cnki.1005-8885.2024.0007

中国邮电高校学报(英文) ›› 2024, Vol. 31 ›› Issue (2): 28-37.doi: 10.19682/j.cnki.1005-8885.2024.0007

所属专题：集成电路

• Semiconductor Devices • 上一篇下一篇

Preparation and characteristic study of Schottky diodes based on Ga₂O₃ thin films

张旭辉,陈海峰,刘祥泰,陆芹,王湛,程航,车露洁,关幼幼,韩晓聪

西安邮电大学

收稿日期:2023-12-04 修回日期:2024-02-26 出版日期:2024-04-30 发布日期:2024-04-30
通讯作者: 陈海峰 E-mail:chenhaifeng@xupt.edu.cn
基金资助:
陕西省自然科学基础研究计划;国家自然科学基金

Preparation and characteristic study of Schottky diodes based on Ga₂O₃ thin films

Received:2023-12-04 Revised:2024-02-26 Online:2024-04-30 Published:2024-04-30

摘要/Abstract

摘要：

This study uses atomic layer deposition (ALD) to grow Ga₂O₃ films on SiO₂ substrates and investigates the influence of film thickness and annealing temperature on film quality. Schottky diode devices are fabricated based on the grown Ga₂O₃ films, and the effects of annealing temperature, electrode size, and electrode spacing on the electrical characteristics of the devices are studied. The results show that as the film thickness increases, the breakdown voltage of the fabricated devices also increases. A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 V. The film quality significantly improves as the annealing temperature of the film increases. At a voltage of 5 V, the current of the film annealed at 900°C is 64 times that of the film annealed at 700°C. The optimum annealing temperature for Ohmic contact electrodes is 450°C. At 550°C, the Ohmic contact metal tends to burn, and the performance of the device is reduced. Reducing the electrode spacing increases the forward current of the device but decreases the reverse breakdown voltage. Increasing the Schottky contact electrode size increases the forward current, but the change is not significant, and there is no significant change in the reverse breakdown voltage. The device also performs well at high temperatures, with a reverse breakdown voltage of 220 V at 125°C.

关键词: atomic layer deposition (ALD), Ga₂O₃ film, Schottky diode, annealing temperature

Abstract:

Key words: atomic layer deposition (ALD), Ga₂O₃ film, Schottky diode, annealing temperature

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Preparation and characteristic study of Schottky diodes based on Ga₂O₃ thin films

Preparation and characteristic study of Schottky diodes based on Ga₂O₃ thin films

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