Acta Metallurgica Sinica(English letters) ›› 2012, Vol. 19 ›› Issue (6): 113-117.doi: 10.1016/S1005-8885(11)60325-7

• Others • 上一篇    下一篇

Design of 10 GHz eight-phase voltage controlled oscillator in 90 nm CMOS

陈莹梅   

  1. Institute of Radio Frequency and Optical Electronic Integrated Circuits, Southeast University, Nanjing 210096, China
  • 收稿日期:2012-05-18 修回日期:2012-09-21 出版日期:2012-12-31 发布日期:2012-12-14
  • 通讯作者: 陈莹梅 E-mail:njcym@seu.edu.cn
  • 基金资助:

    This work was supported by the National High Technology Research and Development Program of China (2011AA010301) and the National Natural Science Foundation of China (60976029).

Design of 10 GHz eight-phase voltage controlled oscillator in 90 nm CMOS

  1. Institute of Radio Frequency and Optical Electronic Integrated Circuits, Southeast University, Nanjing 210096, China
  • Received:2012-05-18 Revised:2012-09-21 Online:2012-12-31 Published:2012-12-14
  • Supported by:

    This work was supported by the National High Technology Research and Development Program of China (2011AA010301) and the National Natural Science Foundation of China (60976029).

摘要:

A novel 10 GHz eight-phase voltage-controlled oscillator (VCO) architecture applied in clock and data recovery (CDR) circuit for 40 Gbit/s optical communications system is proposed. Compared with the traditional eight-phase oscillator, a new ring CL ladder filter structure with four inductors is proposed. The VCO is designed and fabricated in IBM 90 nm complementary metal-oxide-semiconductor transistor (CMOS) technology. Measurement results show the tuning range is 9.2 GHz~11.0 GHz and the phase noise of 108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz. The chip area of VCO is 500 × 685 and the power dissipation is 17.4 mW with the 1.2 V supply voltage.

关键词:

VCO, eight-phase, LC ring oscillator, CL ladder filtering

Abstract:

A novel 10 GHz eight-phase voltage-controlled oscillator (VCO) architecture applied in clock and data recovery (CDR) circuit for 40 Gbit/s optical communications system is proposed. Compared with the traditional eight-phase oscillator, a new ring CL ladder filter structure with four inductors is proposed. The VCO is designed and fabricated in IBM 90 nm complementary metal-oxide-semiconductor transistor (CMOS) technology. Measurement results show the tuning range is 9.2 GHz~11.0 GHz and the phase noise of 108.85 dBc/Hz at 1 MHz offset from the carrier frequency of 10 GHz. The chip area of VCO is 500 × 685 and the power dissipation is 17.4 mW with the 1.2 V supply voltage.

Key words:

VCO, eight-phase, LC ring oscillator, CL ladder filtering