2. Hauptmann S, Schoeniger D, Eickhoff R. A 40 Gbit/s transimpedance amplifier in 0.25 μm SiGe technology with ultra low power consumption. Proceedings of the 17th International Conference on Microwaves, Radar and Wireless Communications (MIKON’08), May 19-21, 2008, Krakow, Poland. Piscataway, NJ, USA: IEEE, 2008: 4p
3. Knochenhauer C, Sedighi B, Ellinger F. 40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOS. Electronics Letters, 2011, 47(10): 605-606
4. Amid S B, Plett C, Schvan P. Fully differential, 40 Gb/s regulated cascode transimpedance amplifier in 0.13 μm SiGe BiCMOS technology. Proceedings of the IEEE Bipolar/BiCMOS circuits and Technology Meeting (BCTM’10), Oct 4-6, 2010, Austin, TX, SA. Piscataway, NJ, USA: IEEE, 2010: 33-36
5. Knochenhauer C, Hauptmann S, Scheytt J C. A jitter-optimized differential 40 Gbit/s transimpedance amplifier in SiGe BiCMOS. IEEE Transactions on Microwave Theory and Techniques, 2010, 58(10): 2538-2548
6. Dutta A K, Takechi M, Virk R S. 40 Gb/s postamplifier and PIN/preamplifier modules for next generation optical front-end systems. Journal of Lightwave Technology, 2002, 20(12): 2229-2238
7. Liao C F, Liu S I. 40 Gbit/s transimpedance-AGC amplifier and CDR circuit for broadband data receivers in 90 nm CMOS. IEEE Journal of Solid-State Circuits, 2008, 43(3): 642-655
8. Kromer C, Sialm G, Erni D, et al. A 40 Gbit/s optical receiver in 80 nm CMOS for short-distance high-density interconnects. Proceedings of the IEEE Asian Solid-State Circuits Conference(ASSCC’06), Nov 13-15, 2006, Hangzhou, China.Piscataway, NJ, USA: IEEE, 2006: 395-398
9. Bashiri S, Plett C, Aguirre J, et al. A 40 Gbit/s transimpedance amplifier in 65 nm CMOS technology. Proceedings of the International Symposium on Circuits and Systems (ISCAS’10), May 30-Jun 3, 2010, Paris, France. New York, NY, USA: IEEE, 2010: 757-760
10. Kim J, Buckwalter J F. A 40 Gbit/s optical transceiver front-end in 45 nm SOI CMOS technology. Proceedings of the 2010 IEEE Custom Integrated Circuits Conference (CICC’10), Sep 19-22, 2010, San Jose, CA, USA. Piscataway, NJ, USA: IEEE, 2010: 4p
11. Park S M, Yoo H J. 1.25 Gbit/s regulated cascode CMOS transimpedance amplifier for Gigabit Ethernet applications. IEEE Journal of Solid-State Circuits, 2004, 39(1): 112-121
12. Kromer C, Sialm G, Morf T, et al. A low-power 20 GHz 52 dBΩ transimpedance amplifier in 80 nm CMOS. IEEE Journal of Solid-State Circuits, 2004, 39(6): 885-894
13. Huang H Y, Chien J C, Lu L H. A 10 Gbit/s inductorless CMOS limiting amplifier with third-order interleaving active feedback. IEEE Journal of Solid-State Circuits, 2007, 42(5): 1111-1120
14. Galal S, Razavi B. 10 Gbit/s limiting amplifier and laser/modulator driver in 0.18 μm CMOS technology. IEEE Journal of Solid-State Circuits, 2003, 38(12): 2138-2146 |