Research on optimizing the noise figure of low noise amplifier method via bias and frequency

doi:10.1016/S1005-8885(10)60093-3

Acta Metallurgica Sinica(English letters) ›› 2011, Vol. 18 ›› Issue (4): 118-122.doi: 10.1016/S1005-8885(10)60093-3

Research on optimizing the noise figure of low noise amplifier method via bias and frequency

张立军¹,李力南²

1. 苏州大学
2. 北京交通大学

收稿日期:2010-12-29 修回日期:2011-05-31 出版日期:2011-08-31 发布日期:2011-08-24
通讯作者: 李力南 E-mail:lnli@bjtu.edu.cn

Research on optimizing the noise figure of low noise amplifier method via bias and frequency

Lijun Zhang¹,Li-Nan LI

Received:2010-12-29 Revised:2011-05-31 Online:2011-08-31 Published:2011-08-24
Contact: Li-Nan LI E-mail:lnli@bjtu.edu.cn

摘要/Abstract

摘要：

In this paper, we present the design of an integrated low noise amplifier (LNA) for wireless local area network (WLAN) applications in the 5.15–5.825 GHz range using a SiGe BiCMOS technology. A novel method that can determine both the optimum bias point and the frequency point for achieving the minimum noise figure is put forward. The method can be used to determine the optimum impedance over a relevant wider operating frequency range. The results show that this kind of optimizing method is more suitable for the WLAN circuits design. The LNA gain is optimized and the noise figure (NF) is reduced. This method can also achieve the noise match and power match simultaneously. This proposal is applied on designing a LNA for IEEE 802.11a WLAN. The LNA exhibits a power gain large than 16 dB from 5.15 to 5.825 GHz range. The noise figure is lower than 2 dB. The OIP3 is 8 dBm. Also the LNA is matched to 50 Ω input impedance with 6 mA DC current for differential design.

关键词:

LNA, SiGe BiCMOS, noise figure, WLAN

Abstract:

Key words:

LNA, SiGe BiCMOS, noise figure, WLAN

中图分类号:

Lijun Zhang Li-Nan LI. Research on optimizing the noise figure of low noise amplifier method via bias and frequency[J]. Acta Metallurgica Sinica(English letters), 2011, 18(4): 118-122.

参考文献

1. Sansen W. Analog design challenges in nanometer CMOS technologies. Proceedings of the IEEE Asian Solid-state Circuits Conference (ASSCC’07), Nov 12-14, 2007, Jeju, Korea. Piscataway, NJ, USA: IEEE, 2007: 5-9

2. Koh J W, Lee J E, Suh C D, et al. A 1/f-noise reduction architecture for an operational amplifier in a 0.13 μm standard digital CMOS technology. Proceedings of the IEEE Asian Solid-State Circuits Conference (ASSCC’06), Nov 13-15, 2006, Hangzhou, China. Piscataway, NJ, USA: IEEE, 2006: 17-182

3. Bronskowski C, Schroeder D. An ultra low-noise CMOS operational amplifier with programmable noise-power trade-off. Proceedings of the European Solid-State Circuits Conference (ESSCIRC’06), Sep 19-22, 2006, Montreux, Switzerland. Piscataway, NJ, USA: IEEE, 2006: 368-371

4. Zhu Z, Tumati R, Collins S, et al. A low-noise low-offset Op Amp in 0.35 μm CMOS process. Proceedings of the 13th IEEE International Conference on Electronics, Circuits and Systems (ICECS’06), Dec 10-13, 2006, Nice, France. Piscataway, NJ, USA: IEEE, 2006: 624-627

5. Wu J, Jiang P, Chen D, et al. A dual-band LNA with active balun for GNSS receivers. Proceedings of the 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT’10), Nov 1-4, 2010, Shanghai, China. Piscataway, NJ, USA: IEEE, 2010: 665-667

6. Im D, Nam I, Lee K. A CMOS active feedback balun-LNA with high IIP2 for wideband digital TV receivers. IEEE Transactions on Microwave Theory and Techniques, 2010, 58(12-1): 3566-3579

7. Shahani A R, Shaeffer D K., Lee T H. A 12-mW wide dynamic range CMOS front-end for a portable GPS receiver. IEEE Journal of Solid-State Circuits, 1997, 32(12): 2061-2070

8. Macedo J A,Copeland M A. A 1.9-GHz silicon receiver with monolithic image filtering. IEEE Journal of Solid-State Circuits, 1998, 33(3): 378-386

9. Joo S H, Choi T Y, Jung B H. A 2.4-GHz resistive feedback LNA in 0.13-μm CMOS. IEEE Journal of Solid-State Circuits, 2009, 44(11): 3019-3029

10. Shaeffer D K, Lee T H. A 1.5V, 1.5 GHz CMOS low noise amplifier. IEEE Journal of Solid-State Circuits, 1997, 32(5): 745-759

11. Gotzfried R, Beisswanger F, Gerlach S, et al. RFIC’s for mobile communication systems using SiGe bipolar technology. IEEE Transactions on Microwave Theory and Techniques, 1998, 46(5-2): 661-668

12. Bastos I, Oliveira L B, Goes J, et al. MOSFET-only wideband LNA with noise cancelling and gain optimization. Proceedings of the 17th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES’10), Jun 24-26, 2010, Wroclaw, Poland. 2010: 306-311

13. Shana’a O, Linscott I, Tyler L. Frequency-scalable SiGe bipolar RF front-end design. IEEE Journal of Solid-State circuits, 2001, 36(6): 888-895

14. Sun Y M, Herzel F, Borngraber J. 60 GHz receiver building blocks in SiGe BiCMOS. Proceedings of the 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF’07), Jan 10-12, 2007, Long Beach, CA, USA. Piscataway, NJ, USA: IEEE, 2007: 219-222

15. Alam S K, DeGroat J. A 1.5V 2.4 GHz differential CMOS low noise amplifier for bluetooth and wireless LAN applications. Proceedings of the 2006 IEEE North-East Workshop on Circuits and Systems (NEWCAS’06), Jun 18-21, 2006, Gatineau, Canada. Piscataway, NJ, USA: IEEE, 2006:13-16

16. Lu Y, Krithivasan R, Kuo L W M, et aI. A 1.8-3.1 dB noise figure (3-10 GHz) SiGe HBT LNA for UWB applications. Proceedings of the 2006 IEEE Radio Frequency Integrated Circuits Symposium (RFIC’06), Jun 11-13, 2006, San Francisco, CA, USA. Piscataway, NJ, USA: IEEE, 2006: 4p

17. Chen C C, Lin Y S, Huang P L, et al. A 4.9-dB NF 53.5-62-GHz micro-machined CMOS wideband LNA with small group-delay-variation. Proceedings of the 2010 IEEE MTT-S International Microwave Symposium Digest (MTT’10), May 23-28, 2010, Anaheim, CA, USA. Piscataway, NJ, USA: IEEE, 2010: 489-492

18. Wang C W, Lee Y B, Yang T Y. A high linearity low noise amplifier in a 0.35 μm SiGe BiCMOS for WCDMA applications. Proceedings of the 2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test (VLSI-TSA-DAT’05), Apr 27-29, 2005, Hsinchu, China. Piscataway, NJ, USA: IEEE, 2005: 153-156

19. Wang X Z, Weber R. Low voltage low power SiGe BiCMOS X-band LNA design and its comparison study with IEEE 802.11a LNA design. Proceedings of the 2005 IEEE International Radar Conference, May 9-12, 2005, Washington, DC, USA. Piscataway, NJ, USA: IEEE, 2005: 27-30

20. Ahsan N, Dabrowski J, Ouacha A. A self-tuning technique for optimization of dual band LNA. Proceedings of the 1st European Conference on Wireless Technology (EuWiT’08), Oct 27-28, 2008, Amsterdam, Netherlands. Piscataway, NJ, USA: IEEE, 2008: 178-181

Research on optimizing the noise figure of low noise amplifier method via bias and frequency

Research on optimizing the noise figure of low noise amplifier method via bias and frequency

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