Design of an L1 band low noise single-chip GPS receiver in 0.18 um CMOS technology

doi:10.1016/S1005-8885(09)60463-5

中国邮电高校学报(英文) ›› 2010, Vol. 17 ›› Issue (3): 60-65.doi: 10.1016/S1005-8885(09)60463-5

Design of an L1 band low noise single-chip GPS receiver in 0.18 um CMOS technology

陈莹梅¹,景永康²,李智群²,章丽²

1. 东南大学射频与光电集成电路研究所李文正楼中406
2.

收稿日期:2009-09-04 修回日期:2010-01-20 出版日期:2010-06-30 发布日期:2010-06-29
通讯作者: 陈莹梅 E-mail:njcym@seu.edu.cn
基金资助:
国家级.国家“863计划”项目

Design of an L1 band low noise single-chip GPS receiver in 0.18 um CMOS technology

Received:2009-09-04 Revised:2010-01-20 Online:2010-06-30 Published:2010-06-29

摘要/Abstract

摘要：

This article presents an L1 band low noise integrated global positioning system (GPS) receiver chip using 0.18 CMOS technology. Dual-conversion with a low-IF architecture was used for this GPS receiver. The receiver is composed of low noise amplifier (LNA), down-conversion mixers, band pass filter, received signal strength indicator, variable gain amplifier, programmable gain amplifier, ADC, PLL frequency synthesizer and other key blocks. The receiver achieves a maximum gain of 105 dB and noise figure less than 6 dB. The variable gain amplifier (VGA) and programmable gain amplifier (PGA) provide gain control dynamic range over 50 dB. The receiver consumes less than 160 mW from a 1.8 V supply while occupying a 2.9 mm2 chip area including the ESD I/O pads.

关键词:

CMOS RF receiver, GPS, low IF, satellite communications, wireless communications

Abstract:

Key words:

CMOS RF receiver, GPS, low IF, satellite communications, wireless communications

陈莹梅李智群 Wang Zhi-gong 景永康章丽. Design of an L1 band low noise single-chip GPS receiver in 0.18 um CMOS technology[J]. Acta Metallurgica Sinica(English letters), 2010, 17(3): 60-65.

参考文献

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Design of an L1 band low noise single-chip GPS receiver in 0.18 um CMOS technology

Design of an L1 band low noise single-chip GPS receiver in 0.18 um CMOS technology

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