Design of 2.1 GHz CMOS Low Noise Amplifier

doi:1005-8885(2006)01-0071-04

中国邮电高校学报(英文)

• Integrated Circuit Design • 上一篇下一篇

Design of 2.1 GHz CMOS Low Noise Amplifier

李恩玲

Science School, Xi’an University of Technology, Xi’an 710048, China

收稿日期:2005-07-04 修回日期:1900-01-01 出版日期:2006-03-30
通讯作者: 李恩玲

Design of 2.1 GHz CMOS Low Noise Amplifier

LI En-ling; SONG Lin-hong; YANG Dang-qiang

Science School, Xi’an University of Technology, Xi’an 710048, China

Received:2005-07-04 Revised:1900-01-01 Online:2006-03-30
Contact: LI En-ling

摘要/Abstract

摘要： This paper discusses the design of a fully differential 2.1 GHz CMOS low noise amplifier using the TSMC 0.25 μm CMOS process. Intended for use in 3G, the low noisse amplifier is fully integrated and without off-chip components. The design uses an LC tank to replace a large inductor to achieve a smaller die area, and uses shielded pad capacitances to improve the noise performance. This paper also presents evaluation results of the design. 18 Refs. In English.

关键词: LNA; LC tank; noise figure; shielded pads

Abstract: This paper discusses the design of a fully differential 2.1 GHz CMOS low noise amplifier using the TSMC 0.25 μm CMOS process. Intended for use in 3G, the low noisse amplifier is fully integrated and without off-chip components. The design uses an LC tank to replace a large inductor to achieve a smaller die area, and uses shielded pad capacitances to improve the noise performance. This paper also presents evaluation results of the design. 18 Refs. In English.

Key words: LNA; LC tank; noise figure; shielded pads

中图分类号:

TN492

LI En-ling; SONG Lin-hong; YANG Dang-qiang. Design of 2.1 GHz CMOS Low Noise Amplifier[J]. Acta Metallurgica Sinica(English letters), doi: 1005-8885(2006)01-0071-04 .

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[2]	张立军李力南. Research on optimizing the noise figure of low noise amplifier method via bias and frequency[J]. Acta Metallurgica Sinica(English letters), 2011, 18(4): 118-122.
[3]	夏温博张晓林. Low power LNA using the MOSFETs in moderate inversion[J]. Acta Metallurgica Sinica(English letters), 2011, 18(3): 120-123.
[4]	张鸿,陈贵灿. Design of a fully differential CMOS LNA for 3.1–10.6 GHz UWB communication systems[J]. Acta Metallurgica Sinica(English letters), 2008, 15(4): 107-111.

Design of 2.1 GHz CMOS Low Noise Amplifier

Design of 2.1 GHz CMOS Low Noise Amplifier

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