Spectral Properties of Fabry-Pérot Laser Diodes and Conventional Semiconductor Optical Amplifiers

doi:1005-8885(2006)01-0063-04

中国邮电高校学报(英文)

Spectral Properties of Fabry-Pérot Laser Diodes and Conventional Semiconductor Optical Amplifiers

陈根祥

Key Laboratory of All Optical and Advanced Telecommunication Networks, Beijing Jiaotong University, Beijing 100044, China

收稿日期:2005-03-01 修回日期:1900-01-01 出版日期:2006-03-30
通讯作者: 陈根祥

Spectral Properties of Fabry-Pérot Laser Diodes and Conventional Semiconductor Optical Amplifiers

CHEN Gen-xiang; <SPAN lang=EN-US style=

Key Laboratory of All Optical and Advanced Telecommunication Networks, Beijing Jiaotong University, Beijing 100044, China

Received:2005-03-01 Revised:1900-01-01 Online:2006-03-30
Contact: CHEN Gen-xiang

摘要/Abstract

摘要： This paper presents an unified comprehensive model for the analysis of the spectral properties of Fabry-Pérot laser diodes and conventional semiconductor optical amplifiers. We develop the model by considering the wide-band amplified spontaneous emission fields and the input optical signal fields in a general frame. Specifically, this paper discusses theoretical aspects of the model in details, which are based upon the spectra of material gain and spontaneous emission power, nonlinear gain suppression, and longitudinal spatial hole burning. This paper also presents simulation results of the model for the case of conventional semiconductor optical amplifier and the case of Fabry-Pérot laser diode to demonstrate its capabilities. 18 Refs. In English.

关键词: semiconductor optical amplifier; laser diode; amplified spontaneous emission; traveling-wave model.

Abstract: This paper presents an unified comprehensive model for the analysis of the spectral properties of Fabry-Pérot laser diodes and conventional semiconductor optical amplifiers. We develop the model by considering the wide-band amplified spontaneous emission fields and the input optical signal fields in a general frame. Specifically, this paper discusses theoretical aspects of the model in details, which are based upon the spectra of material gain and spontaneous emission power, nonlinear gain suppression, and longitudinal spatial hole burning. This paper also presents simulation results of the model for the case of conventional semiconductor optical amplifier and the case of Fabry-Pérot laser diode to demonstrate its capabilities. 18 Refs. In English.

Key words: semiconductor optical amplifier; laser diode; amplified spontaneous emission; traveling-wave model.

中图分类号:

TN929.11

CHEN Gen-xiang; <SPAN lang=EN-US style=

. Spectral Properties of Fabry-Pérot Laser Diodes and Conventional Semiconductor Optical Amplifiers[J]. Acta Metallurgica Sinica(English letters), doi: 1005-8885(2006)01-0063-04 .

[1]	廖延娜阴亚芳. Design and realization of phase retardation-control polarization controllers based on artificial birefringence[J]. Acta Metallurgica Sinica(English letters), 2011, 18(6): 116-121.
[2]	黄善国;李斌;邓煜;张杰;顾畹仪. Systematic and efficient GMPLS-based recovery mech- anism with soft-protection using enhanced LMP[J]. Acta Metallurgica Sinica(English letters), 2008, 15(1): 106-111.
[3]	. Transformations for the variable coefficient Ginzburg– Landau equation with symbolic computation[J]. Acta Metallurgica Sinica(English letters), 2006, 13(3): 98-101.

Spectral Properties of Fabry-Pérot Laser Diodes and Conventional Semiconductor Optical Amplifiers

Spectral Properties of Fabry-Pérot Laser Diodes and Conventional Semiconductor Optical Amplifiers

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

编辑推荐

Metrics

本文评价