Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

doi:10.19682/j.cnki.1005-8885.2024.0001

中国邮电高校学报(英文) ›› 2024, Vol. 31 ›› Issue (2): 3-9.doi: 10.19682/j.cnki.1005-8885.2024.0001

所属专题：集成电路

• Semiconductor Devices • 下一篇

Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

黄义¹,王学成¹,高升²,刘斌¹,张红升¹,韩根全³

1. 重庆邮电大学光电工程学院
2. 重庆邮电大学
3. 西安电子科技大学

收稿日期:2023-10-19 修回日期:2024-02-25 出版日期:2024-04-30 发布日期:2024-04-30
通讯作者: 高升 E-mail:gaosheng@cqupt.edu.cn
基金资助:
重庆市自然科学基金;重庆市技术创新与应用示范重点项目基金;重庆邮电大学博士科研启动基金

Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

Received:2023-10-19 Revised:2024-02-25 Online:2024-04-30 Published:2024-04-30
Contact: Sheng Gao E-mail:gaosheng@cqupt.edu.cn
Supported by:

This work was supported by the General Program of National Natural Science Foundation of Chongqing (CSTB2023NSCQ-MSX0475), the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications (A2023-7), and the Technology Innovation and Application Demonstration key Project of Chongqing Municipality (cstc2019jszx-zdztzxX0005, cstc2020jscx-gksbX0011).

摘要/Abstract

摘要：

In this paper, a novel superjunction 4H-silicon carbide (4H-SiC) trench-gate insulated-gate bipolar transistor (IGBT) featuring an integrated clamping PN diode between the P-shield and emitter (TSD-IGBT) is designed and theoretically studied. The heavily doping superjunction layer contributes to a low specific on-resistance, excellent electric field distribution, and quasi-unipolar drift current. The anode of the clamping diode is in floating contact with the P-shield. In the on-state, the potential of the P-shield is raised to the turn-on voltage of the clamping diode, which prevents the hole extraction below the N-type carrier storage layer (NCSL). Additionally, during the turn-off transient, once the clamping diode is turned on, it also promotes an additional hole extraction path. Furthermore, the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.

关键词: 4H-SiC，沟槽栅，超结，钳位二极管

Abstract:

Key words:

4H-silicon carbide(4H-SiC), trench-gate, superjunction, clamping diode

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Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

Superjunction 4H-SiC trench-gate IGBT with an integrated clamping PN diode

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