Small-signal switch model of GaN HEMTs for MMIC applications

doi:10.1016/S1005-8885(16)60058-4

中国邮电高校学报(英文) ›› 2016, Vol. 23 ›› Issue (5): 56-60.doi: 10.1016/S1005-8885(16)60058-4

Small-signal switch model of GaN HEMTs for MMIC applications

杜林¹,杨小峰²,李杨¹,张进成¹,郝跃¹

1. 西安电子科技大学微电子学院
2. 西安邮电大学

收稿日期:2016-07-05 修回日期:2016-09-29 出版日期:2016-10-30 发布日期:2016-10-26
通讯作者: 杜林 E-mail:ldu@xidian.edu.cn
基金资助:
he National Natural Science Foundation of China (61574108, 61574112, 61504099), the Natural Science Basic Research Plan in Shaanxi Province of China (605119425012).

Small-signal switch model of GaN HEMTs for MMIC applications

Du Lin1 , Yang Xiaofeng2, Li Yang1, Zhang Jincheng1, Hao Yue1

Received:2016-07-05 Revised:2016-09-29 Online:2016-10-30 Published:2016-10-26
Contact: Lin DU E-mail:ldu@xidian.edu.cn
Supported by:
he National Natural Science Foundation of China (61574108, 61574112, 61504099), the Natural Science Basic Research Plan in Shaanxi Province of China (605119425012).

摘要/Abstract

摘要： Gallium nitride (GaN) high electron mobility transistor (HEMT) with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 × 125 μm gate width is fabricated to verify the model, which can be treated as a single pole single throw (SPST) switch due to the ON state and OFF state. The measurement results show a good agreement with the simulation results, which demonstrates the effectiveness of the proposed model.

关键词: GaN HEMT, switch model, symmetrical structure, MMIC

Abstract: Gallium nitride (GaN) high electron mobility transistor (HEMT) with symmetrical structure as a control device is discussed in this paper. The equivalent circuit model is proposed on the basis of physical and electrical properties of the GaN HEMT device. A transistor with 0.5 μm gate length and 6 × 125 μm gate width is fabricated to verify the model, which can be treated as a single pole single throw (SPST) switch due to the ON state and OFF state. The measurement results show a good agreement with the simulation results, which demonstrates the effectiveness of the proposed model.

Key words: GaN HEMT, switch model, symmetrical structure, MMIC

中图分类号:

TN43

Du Lin, Yang Xiaofeng, Li Yang, Zhang Jincheng, Hao Yue. Small-signal switch model of GaN HEMTs for MMIC applications[J]. JOURNAL OF CHINA UNIVERSITIES OF POSTS AND TELECOM, 2016, 23(5): 56-60.

参考文献

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Small-signal switch model of GaN HEMTs for MMIC applications

Small-signal switch model of GaN HEMTs for MMIC applications

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