Design of a fully differential CMOS LNA for 3.1–10.6 GHz UWB communication systems

Acta Metallurgica Sinica(English letters) ›› 2008, Vol. 15 ›› Issue (4): 107-111.doi:

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Design of a fully differential CMOS LNA for 3.1–10.6 GHz UWB communication systems

ZHANG Hong, CHEN Gui-can

Institute of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China

Received:2008-05-15 Revised:1900-01-01 Online:2008-12-30
Contact: ZHANG Hong

Abstract

Abstract:

A fully differential complementary metal oxide semiconductor (CMOS) low noise amplifier (LNA) for 3.1–10.6 GHz ultra-wideband (UWB) communication systems is presented. The LNA adopts capacitive cross-coupling common-gate (CG) topology to achieve wideband input matching and low noise figure (NF). Inductive series-peaking is used for the LNA to obtain broadband flat gain in the whole 3.1–10.6 GHz band. Designed in 0.18 m CMOS technology, the LNA achieves an NF of 3.1–4.7 dB, an S11 of less than –10 dB, an S21 of 10.3 dB with 0.4 dB fluctuation, and an input 3rd interception point (IIP3) of –5.1 dBm, while the current consumption is only 4.8 mA from a 1.8 V power supply. The chip area of the LNA is 10.94 mm2.

Key words:

LNA;common gate;capacitive cross coupling;series peaking;UWB

ZHANG Hong, CHEN Gui-can. Design of a fully differential CMOS LNA for 3.1–10.6 GHz UWB communication systems[J]. Acta Metallurgica Sinica(English letters), 2008, 15(4): 107-111.

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Design of a fully differential CMOS LNA for 3.1–10.6 GHz UWB communication systems

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