Acta Metallurgica Sinica(English letters)
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LI En-ling; SONG Lin-hong; YANG Dang-qiang
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Abstract: This paper discusses the design of a fully differential 2.1 GHz CMOS low noise amplifier using the TSMC 0.25 μm CMOS process. Intended for use in 3G, the low noisse amplifier is fully integrated and without off-chip components. The design uses an LC tank to replace a large inductor to achieve a smaller die area, and uses shielded pad capacitances to improve the noise performance. This paper also presents evaluation results of the design. 18 Refs. In English.
Key words: LNA; LC tank; noise figure; shielded pads
CLC Number:
TN492
LI En-ling; SONG Lin-hong; YANG Dang-qiang. Design of 2.1 GHz CMOS Low Noise Amplifier[J]. Acta Metallurgica Sinica(English letters), doi: 1005-8885(2006)01-0071-04 .
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URL: https://jcupt.bupt.edu.cn/EN/1005-8885(2006)01-0071-04
https://jcupt.bupt.edu.cn/EN/Y2006/V13/I1/71
