Trench gate GaN IGBT with controlled hole injection efficiency
黄义 李玥玥 高升 王琦 Liu Bin 韩根全

Trench gate GaN IGBT with controlled hole injection efficiency

中国邮电高校学报(英文) . 2024, (2): 10 -16 .  DOI: 10.19682/j.cnki.1005-8885.2024.0012