<p class="MsoNormal" align="center" style="text-align:left;margin-left:0cm;"> 50-110 GHz, high isolation, and high-power linearity single-pole double-throw switch utilizing 100-nm GaN HEMT technology

韩群飞胡三明张天羽陈庆沈一竹王维波陶洪琪

50-110 GHz, high isolation, and high-power linearity single-pole double-throw switch utilizing 100-nm GaN HEMT technology

中国邮电高校学报(英文) . 2024, (2): 38 -43 . DOI: 10.19682/j.cnki.1005-8885.2024.0011