Design and implementation of a high-efficiency concurrent 
dual-band power amplifier

doi:10.1016/S1005-8885(14)60350-2

中国邮电高校学报(英文) ›› 2014, Vol. 21 ›› Issue (6): 94-99.doi: 10.1016/S1005-8885(14)60350-2

Design and implementation of a high-efficiency concurrent dual-band power amplifier

杨乾坤,刘元安,于翠屏,Li Shu-lan,李久超

北京邮电大学

收稿日期:2014-07-28 修回日期:2014-09-22 出版日期:2014-12-31 发布日期:2014-12-31
通讯作者: 杨乾坤 E-mail:yangchienkun@gmail.com
基金资助:
国家重点基础研究发展计划资助;国家自然基金重大科研仪器设备研制专项;国家自然科学基金

Design and implementation of a high-efficiency concurrent dual-band power amplifier

Received:2014-07-28 Revised:2014-09-22 Online:2014-12-31 Published:2014-12-31
Contact: Qian-Kun Yang E-mail:yangchienkun@gmail.com

摘要/Abstract

摘要： 　This paper studies the behaviors of power amplifier (PA) driven by a single-carrier continuous wave (CW) signal and a two-carrier CW signal both in theory and simulation, and explains why the traditional dual-band PA failed to perform satisfactory results when a two-carrier CW signal is applied to, called concurrently. Besides that, an evaluation standard of concurrent dual-band PA was presented to value its performance. Solution was given with design and fabrication of a concurrent 1.85 GHz/2.65 GHz class F PA, employing a 10W GaN HEMT device from Cree, CGH40010, whose measurement shows the saturated output power is 40.6 dBm and 40.8dBm with drain efficiencies (DE) of 77.4% and 75.3% at 1.85 GHz and 2.65 GHz, respectively. On the other hand, we see that the peak DE achieves 59.7% with an output power of 39.9 dBm in concurrent mode, which follows up with the standard.

关键词: PA, concurrent dual-band, intermodulation and harmonic, high efficiency

Abstract: 　This paper studies the behaviors of power amplifier (PA) driven by a single-carrier continuous wave (CW) signal and a two-carrier CW signal both in theory and simulation, and explains why the traditional dual-band PA failed to perform satisfactory results when a two-carrier CW signal is applied to, called concurrently. Besides that, an evaluation standard of concurrent dual-band PA was presented to value its performance. Solution was given with design and fabrication of a concurrent 1.85 GHz/2.65 GHz class F PA, employing a 10W GaN HEMT device from Cree, CGH40010, whose measurement shows the saturated output power is 40.6 dBm and 40.8dBm with drain efficiencies (DE) of 77.4% and 75.3% at 1.85 GHz and 2.65 GHz, respectively. On the other hand, we see that the peak DE achieves 59.7% with an output power of 39.9 dBm in concurrent mode, which follows up with the standard.

Key words: PA, concurrent dual-band, intermodulation and harmonic, high efficiency

中图分类号:

参考文献

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Design and implementation of a high-efficiency concurrent dual-band power amplifier

Design and implementation of a high-efficiency concurrent dual-band power amplifier

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