Low power 13 Gbit/s VCSEL current driver in 0.18 μm CMOS for optical interconnection

doi:10.1016/S1005-8885(13)60039-4

中国邮电高校学报(英文)

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Low power 13 Gbit/s VCSEL current driver in 0.18 μm CMOS for optical interconnection

陈莹梅,WANG Jin-fei, ZHANG Li, LI Wei

东南大学射频与光电集成电路研究所李文正楼中406

收稿日期:2012-08-31 修回日期:2012-11-27 出版日期:2013-04-30 发布日期:2013-04-26
通讯作者: 陈莹梅 E-mail:njcym@seu.edu.cn
基金资助:
This work was supported by the Hi-Tech Research and Development Program of China (2011AA010301) and the National Natural Science Foundation of China (60976029).

Low power 13 Gbit/s VCSEL current driver in 0.18 μm CMOS for optical interconnection

Received:2012-08-31 Revised:2012-11-27 Online:2013-04-30 Published:2013-04-26
Supported by:
This work was supported by the Hi-Tech Research and Development Program of China (2011AA010301) and the National Natural Science Foundation of China (60976029).

摘要/Abstract

摘要：

A design of 13 Gbit/s vertical cavity surface emitting laser (VCSEL) driver using 0.18 μm complementary metal oxide semiconductor (CMOS) technology is presented in this paper. The core unit of the driver consists of pre-amplify stage and output stage circuit. Techniques of three stages differential amplifier with low impedance load and active feedback are employed in pre-amplify stage, and technique of C3A is adopted in output stage to acquire low power consumption and high speed. The experimental results show that the circuit can work at the data rate of 10 Gbit/s and maximum of 13.2 Gbit/s. The output modulation current is up to 12.5 mA and the power dissipation is only 68 mW with a 1.8 V power supply.

关键词:

VCSEL, CMOS, laser current driver, active feedback

Abstract:

Key words:

VCSEL, CMOS, laser current driver, active feedback

参考文献

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Low power 13 Gbit/s VCSEL current driver in 0.18 μm CMOS for optical interconnection

Low power 13 Gbit/s VCSEL current driver in 0.18 μm CMOS for optical interconnection

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