Design of on-chip 15~18 GHz ultra low noise amplifier

doi:10.1016/S1005-8885(14)60310-1

中国邮电高校学报(英文) ›› 2014, Vol. 21 ›› Issue (4): 15-18.doi: 10.1016/S1005-8885(14)60310-1

Design of on-chip 15~18 GHz ultra low noise amplifier

高原¹,张宝军²,张博¹

School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710061, China

收稿日期:2014-02-24 修回日期:2014-06-17 出版日期:2014-08-31 发布日期:2014-08-30
通讯作者: 高原 E-mail:734616358@qq.com

Design of on-chip 15~18 GHz ultra low noise amplifier

School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an 710061, China

Received:2014-02-24 Revised:2014-06-17 Online:2014-08-31 Published:2014-08-30

摘要/Abstract

摘要： With rapid development communication system, high signal to noise ratio (SNR) system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits (MMICs). To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier (LNA) was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz–18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide (GaAs) P high electron mobility transistor (P-HEMT) process. The total current is 15 mA, while the DC power consumption is only 45 mW.

关键词: LNA, GAAS P-HEMT, MMIC, K-bAND

Abstract: With rapid development communication system, high signal to noise ratio (SNR) system is required. In high frequency bandwidth, high loss, low Q inductors and high noise figure is a significant challenge with on-chip monolithic microwave integrated circuits (MMICs). To overcome this problem, high Q, low loss transmission line characteristics was analyzed. Compared with the same inductor value of the lumped component and the transmission line, it has a higher Q value and lower loss performance in high frequency, and a 2-stage common-source low noise amplifier (LNA) was presented, which employs source inductor feedback technology and high Q low loss transmission line matching network technique with over 17.6 dB small signal gain and 1.1 dB noise figure in 15 GHz–18 GHz. The LNA was fabricated by WIN semiconductors company 0.15 μm gallium arsenide (GaAs) P high electron mobility transistor (P-HEMT) process. The total current is 15 mA, while the DC power consumption is only 45 mW.

Key words: LNA, GAAS P-HEMT, MMIC, K-bAND

参考文献

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Design of on-chip 15~18 GHz ultra low noise amplifier

Design of on-chip 15~18 GHz ultra low noise amplifier

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