中国邮电高校学报(英文)

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Low power LNA using the MOSFETs in moderate inversion

夏温博,张晓林   

  1. 北京航空航天大学
  • 收稿日期:2010-10-15 修回日期:2011-03-30 出版日期:2011-06-30 发布日期:2011-06-13
  • 通讯作者: 夏温博 E-mail:xiawenbo1982114@163.com
  • 基金资助:

    北京市重点学科资助项目

Low power LNA using the MOSFETs in moderate inversion

  • Received:2010-10-15 Revised:2011-03-30 Online:2011-06-30 Published:2011-06-13
  • Contact: Wen boXia E-mail:xiawenbo1982114@163.com
  • Supported by:

    Beijing Leading Subject Foundation Project

摘要:

This paper presents an integrated complementary metal oxide semiconductor (CMOS) low power low noise amplifier (LNA) for global positioning system (GPS) receivers. To achieve low power dissipation, the MOS transistors in the proposed LNA are biased in moderate inversion region. It is implemented by SMIC 180 nm 1P6M CMOS process. The experiment results show that a gain of 12.14 dB@1.57 GHz is achieved with low noise figure (NF) of 1.62 dB. The power consumption of the circuit is 1.5 mW at supply voltage of 1.8 V. The ratio of gain to dc power consumption is 8 dB/mW. The size of the LNA is only 980 μm× 720 μm including the pads.

关键词:

CMOS, GPS, LNA, moderate inversion, radio frequency (RF)

Abstract:

This paper presents an integrated complementary metal oxide semiconductor (CMOS) low power low noise amplifier (LNA) for global positioning system (GPS) receivers. To achieve low power dissipation, the MOS transistors in the proposed LNA are biased in moderate inversion region. It is implemented by SMIC 180 nm 1P6M CMOS process. The experiment results show that a gain of 12.14 dB@1.57 GHz is achieved with low noise figure (NF) of 1.62 dB. The power consumption of the circuit is 1.5 mW at supply voltage of 1.8 V. The ratio of gain to dc power consumption is 8 dB/mW. The size of the LNA is only 980 μm× 720 μm including the pads.

Key words:

CMOS, GPS, LNA, moderate inversion, radio frequency (RF)

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