中国邮电高校学报(英文) ›› 2010, Vol. 17 ›› Issue (3): 20-23.doi: 10.1016/S1005-8885(09)60474-X

• Wireless • 上一篇    下一篇

CMOS Ring VCO for UHF RFID Readers

孙玲1,唐路2   

  1. 1. 南通大学江苏省专用集成电路设计重点实验室
    2. 东南大学信息科学与工程学院
  • 收稿日期:2009-08-26 修回日期:2010-01-21 出版日期:2010-06-30 发布日期:2010-06-29
  • 通讯作者: 孙玲 E-mail:sun.l@ntu.edu.cn

CMOS Ring VCO for UHF RFID Readers

  • Received:2009-08-26 Revised:2010-01-21 Online:2010-06-30 Published:2010-06-29
  • Contact: Ling SUN E-mail:sun.l@ntu.edu.cn

摘要:

A complementary metal oxide semiconductor (CMOS) voltage controlled ring oscillator for ultra high frequency (UHF) radio frequency identification (RFID) readers has been realized and characterized. Fabricated in charter 0.35 ?m CMOS process, the total chip size is 0.47×0.67 mm2. While excluding the pads, the core area is only 0.15×0.2 mm2. At a supply voltage of 3.3 V, the measured power consumption is 66 mW including the output buffer for 50 ? testing load. This proposed voltage-controlled ring oscillator exhibits a low phase noise of 116 dBc/Hz at 10 MHz offset from the center frequency of 922.5 MHz and a lower tuning gain through the use of coarse/fine frequency control.

关键词:

CMOS technology, RFID, VCO, phase noise

Abstract:

A complementary metal oxide semiconductor (CMOS) voltage controlled ring oscillator for ultra high frequency (UHF) radio frequency identification (RFID) readers has been realized and characterized. Fabricated in charter 0.35 ?m CMOS process, the total chip size is 0.47×0.67 mm2. While excluding the pads, the core area is only 0.15×0.2 mm2. At a supply voltage of 3.3 V, the measured power consumption is 66 mW including the output buffer for 50 ? testing load. This proposed voltage-controlled ring oscillator exhibits a low phase noise of 116 dBc/Hz at 10 MHz offset from the center frequency of 922.5 MHz and a lower tuning gain through the use of coarse/fine frequency control.

Key words:

CMOS technology, RFID, VCO, phase noise