Design of 1.9 GHz RF CMOS VCO

doi:10.1016/S1005-8885(08)60234-4

中国邮电高校学报(英文) ›› 2009, Vol. 16 ›› Issue (3): 103-107.doi: 10.1016/S1005-8885(08)60234-4

Design of 1.9 GHz RF CMOS VCO

李恩玲,王雪,宋林红,苑永霞, YU Fa-da, LIU Man-cang

School of Sciences, Xi’an University of Technology, Xi’an 710048, China

收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2009-06-30
通讯作者: 李恩玲

Design of 1.9 GHz RF CMOS VCO

LI En-ling, WANG Xue, SONG Lin-hong, YUAN Yong-xia, YU Fa-da, LIU Man-cang

School of Sciences, Xi’an University of Technology, Xi’an 710048, China

Received:1900-01-01 Revised:1900-01-01 Online:2009-06-30
Contact: LI En-ling

摘要/Abstract

摘要：

A voltage controlled oscillator (VCO) module is designed, which can be used for the third generation mobile communication (3G) system. The circuit is simulated by spectre radio frequency (RF) by TSMC 0.25 μm CMOS process. During the simulation, the performance parameters of the designed VCO are as follows: tuning range 1.804 GHz–2.039 GHz, phase noise 136.457 dBc/Hz @1 MHz, 146.045 dBc/Hz@3 MHz, supply voltage 2.5 V, voltage output rate of 0.8 V–2.6 V, power consumption 25 mW. The layout of the related circuit is drawn by the Virtuoso Layout Editor.

关键词:

;LC;voltage;controlled;oscillator,;on-chip;inductor,;on-chip;varactor,;phase;noise

Abstract:

Key words:

LC voltage controlled oscillator;on-chip inductor;on-chip varactor;phase noise

LI En-ling, WANG Xue, SONG Lin-hong, YUAN Yong-xia, YU Fa-da, LIU Man-cang. Design of 1.9 GHz RF CMOS VCO[J]. Acta Metallurgica Sinica(English letters), 2009, 16(3): 103-107.

参考文献

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Design of 1.9 GHz RF CMOS VCO

Design of 1.9 GHz RF CMOS VCO

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