50-110 GHz, high isolation, and high-power linearity single-pole double-throw switch utilizing  100-nm GaN HEMT technology
韩群飞 胡三明 张天羽 陈庆 沈一竹 王维波 陶洪琪
The Journal of China Universities of Posts and Telecommunications . 2024, (2): 38 -43 .  DOI: 10.19682/j.cnki.1005-8885.2024.0011