With the development of deep learning (DL), joint source-channel coding (JSCC) solutions for end-to-end transmission have gained a lot of attention. Adaptive deep JSCC schemes support dynamically adjusting the rate according to different channel conditions during transmission, enhancing robustness in dynamic wireless environment. However, most of the existing adaptive JSCC schemes only consider different channel conditions, ignoring the different feature importance in the image processing and transmission. The uniform compression of different features in the image may result in the compromise of critical image details, particularly in low signal-to-noise ratio (SNR) scenarios. To address the above issues, in this paper, a dual attention mechanism is introduced and an SNR-adaptive deep JSCC mechanism with a convolutional block attention module (CBAM) is proposed, in which matrix operations are applied to features in spatial and channel dimensions respectively. The proposedsolution concatenates the pooling feature with the SNR level and passes it sequentially through the channel attention network and spatial attention network to obtain the importance evaluation result. Experiments show that the proposed solution outperforms other baseline schemes in terms of peak SNR (PSNR) and structural similarity (SSIM), particularly in low SNR scenarios or when dealing with complex image content.

Membership inference attacks on machine learning models have drawn significant attention. While current research primarily utilizes shadow modeling techniques, which require knowledge of the target model and training data, practical scenarios involve black-box access to the target model with no available information. Limited training data further complicate the implementation of these attacks. In this paper, we experimentally compare common data enhancement schemes and propose a data synthesis framework based on the variational autoencoder generative adversarial network (VAE-GAN) to extend the training data for shadow models. Meanwhile, this paper proposes a shadow model training algorithm based on adversarial training to improve the shadow model's ability to mimic the predicted behavior of the target model when the target model's information is unknown. By conducting attack experiments on different models under the black-box access setting, this paper verifies the effectiveness of the VAE-GAN-based data synthesis framework for improving the accuracy of membership inference attack. Furthermore, we verify that the shadow model, trained by using the adversarial training approach, effectively improves the degree of mimicking the predicted behavior of the target model. Compared with existing research methods, the method proposed in this paper achieves a 2% improvement in attack accuracy and delivers better attack performance.

In this paper, a novel superjunction 4H-silicon carbide (4H-SiC) trench-gate insulated-gate bipolar transistor (IGBT) featuring an integrated clamping PN diode between the P-shield and emitter (TSD-IGBT) is designed and theoretically studied. The heavily doping superjunction layer contributes to a low specific on-resistance, excellent electric field distribution, and quasi-unipolar drift current. The anode of the clamping diode is in floating contact with the P-shield. In the on-state, the potential of the P-shield is raised to the turn-on voltage of the clamping diode, which prevents the hole extraction below the N-type carrier storage layer (NCSL). Additionally, during the turn-off transient, once the clamping diode is turned on, it also promotes an additional hole extraction path. Furthermore, the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.

In this work, β-Ga₂O₃ thin films were grown on SiO₂ substrate by atomic layer deposition (ALD) and annealed in N₂ atmosphere to enhance the crystallization quality of the thin films, which were verified from X-rays diffraction (XRD). Based on the grown β-Ga₂O₃ thin films, vertical metal-semiconductor-metal (MSM) interdigital photodetectors (PDs) were fabricated and investigated. The PDs have an ultralow dark current of 1.92 pA, ultra-high photo-to-dark current ratio (PDCR) of 1.7×10⁶, and ultra-high detectivity of 4.25×10¹⁴ Jones at a bias voltage of 10 V under 254 nm deep ultraviolet (DUV). Compared with the horizontal MSM PDs under the same process, the PDCR and detectivity of the fabricated vertical PDs are increased by 1 000 times and 100 times, respectively. In addition, the vertical PDs possess a high responsivity of 34.24 A/W and an external quantμm efficiency of 1.67×10⁴%, and also exhibit robustness and repeatability, which indicate excellent performance. Then the effects of electrode size and external irradiation conditions on the performance of the vertical PDs continued to be investigated.

Unmanned aerial vehicles (UAVs) are increasingly applied in various mission scenarios for their versatility, scalability and cost-effectiveness. In UAV mission planning systems (UMPSs), an efficient mission planning strategy is essential to meet the requirements of UAV missions. However, rapidly changing environments and unforeseen threats pose challenges to UMPSs, making efficient mission planning difficult. To address these challenges, knowledge graph technology can be utilized to manage the complex relations and constraints among UAVs, missions, and environments. This paper investigates knowledge graph application in UMPSs, exploring its modeling, representation, and storage concepts and methodologies. Subsequently, the construction of a specialized knowledge graph for UMPS is detailed. Furthermore, the paper delves into knowledge reasoning within UMPSs, emphasizing its significance in timely updates in the dynamic environment. A graph neural network (GNN)-based approach is proposed for knowledge reasoning, leveraging GNNs to capture structural information and accurately predict missing entities or relations in the knowledge graph. For relation reasoning, path information is also incorporated to improve the accuracy of inference. To account for the temporal dynamics of the environment in UMPS, the influence of timestamps is captured through the attention mechanism. The effectiveness and applicability of the proposed knowledge reasoning method are verified via simulations.

This paper proposes a multi-access and multi-user semantic communication scheme based on semantic matching and intent deviation to address the increasing demand for wireless users and data. The scheme enables flexible management of long frames, allowing each unit of bandwidth to support a higher number of users. By leveraging semantic classification, different users can independently access the network through the transmission of long concatenated sequences without modifying the existing wireless communication architecture. To overcome the potential disadvantage of incomplete semantic database matching leading to semantic intent misunderstanding, the scheme proposes using intent deviation as an advantage. This allows different receivers to interpret the same semantic information differently, enabling multiplexing where one piece of information can serve multiple users with distinct purposes. Simulation results show that at a bit error rate (BER) of 0.1, it is possible to reduce the transmission by approximately 20 semantic basic units.

In this paper, a novel trench gate gallium nitride insulated gate bipolar transistor (GaN IGBT), in which the collector is divided into multiple regions to control the hole injection efficiency, is designed and theoretically studied. The incorporation of a P+/P- multi-region alternating structure in the collector region mitigates hole injection within the collector region. When the device is in forward conduction, the conductivity modulation effect results in a reduced storage of carriers in the drift region. As a result, the number of carriers requiring extraction during device turn-off is minimized, leading to faster turn-off speed. The results illustrate that the GaN IGBT with controlled hole injection efficiency (CEH GaN IGBT) exhibits markedly enhanced performance compared to conventional GaN IGBT, showing a remarkable 42.2% reduction in turn-off time and a notable 28.5% decrease in turn-off loss.