%0 Journal Article %A 刘世军 邹雪城 %T Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices %D 2017 %R 10.1016/S1005-8885(17)60214-0 %J 中国邮电高校学报(英文版) %P 75-82 %V 24 %N 3 %X NAND flash chips have been innovated from two-dimension (2D) design which is based on planar NAND cells to three-dimension (3D) design which is based on vertical NAND cells. Two types of NAND flash technologies–charge-trap (CT) and floating-gate (FG) are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared. %U https://jcupt.bupt.edu.cn/CN/10.1016/S1005-8885(17)60214-0